IRLR3110ZPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLR3110ZPBF
Manufacturer

Infineon
ChipWorker Part#

CW7454804
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 100V 63A
Documentation

Datasheet

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IRLR3110ZPBF Specifications

Attribute	Attribute Value

Part Number	IRLR3110ZPBF
Manufacturer	Infineon
ChipWorker Part#	CW7454804
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	140 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.014 Ω
Polarity	N-Channel
Power Dissipation	140 W
Threshold Voltage	2.5 V
Input Capacitance	3980pF @25V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	63A
Rise Time	110 ns
Reverse recovery time	34 ns
Maximum Forward Voltage (Max)	1.3 V
Input Capacitance (Ciss)	3980pF @25V(Vds)
Input Power (Max)	140 W
Fall Time	48 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	140W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

Product Description

The IRLR3110ZPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. This features combines to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications.
Fully avalanche rated
Advanced process technology
Ultra low on resistance
Fast switching

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