IRLR3410PBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRLR3410PBF
Manufacturer

Infineon
ChipWorker Part#

CW11253107
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

DPAK N-CH 100V 17A
Documentation

Datasheet

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IRLR3410PBF Specifications

Attribute	Attribute Value

Part Number	IRLR3410PBF
Manufacturer	Infineon
ChipWorker Part#	CW11253107
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Power Rating	52 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.105 Ω
Polarity	N-Channel
Power Dissipation	79 W
Threshold Voltage	2 V
Input Capacitance	800 pF
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	17A
Rise Time	53 ns
Input Capacitance (Ciss)	800pF @25V(Vds)
Fall Time	26 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	79W (Tc)
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.39 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

Product Description

The IRLR3410PBF is a 100V single N-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface mount applications.
Logic level gate drive
Ultra low on-resistance
Surface mount
Advanced process technology
Fast switching
Fully avalanche rated

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