IRS23364DSPBF - Infineon

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IRS23364DSPBF
Manufacturer

Infineon
ChipWorker Part#

CW13726012
Category

FET Driver
Package

SOIC-28
Description

MOSFET DRVR 600V 0.35A 6Out Hi/Lo Side 3-Phase Brdg Non-Inv 28Pin SOIC W Tube
Documentation

Datasheet

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IRS23364DSPBF Specifications

Attribute	Attribute Value

Part Number	IRS23364DSPBF
Manufacturer	Infineon
ChipWorker Part#	CW13726012
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	28 Pin
Case/Package	SOIC-28
Supply Voltage (DC)	11.5V (min)
Power Rating	1.6 W
Rise/Fall Time	125ns, 50ns
Number of Outputs	6 Output
Output Voltage	600 V
Output Current	200.350 mA
Number of Channels	6 Channel
Number of Positions	28 Position
Power Dissipation	1600 mW
Fall Time (Max)	75 ns
Fall Time (Max)	190 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1600 mW
Supply Voltage	11.5V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	11.5 V
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Size-Length	18.1 mm
Size-Width	7.6 mm
Size-Height	2.35 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The IRS23364DSPBF is a high voltage high speed power MOSFET and IGBT Gate Driver with three high-side and low-side referenced output channels for 3-phase applications. Proprietary HVIC and latch immune CMOS technologies have been implemented in a rugged monolithic structure. The floating logic input is compatible with standard CMOS or LSTTL outputs. An open-drain FAULT signal is provided to indicate that a fault has occurred. Fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output driver features a high-pulse current buffer stage designed for minimum driver cross-conduction. Shoot-through protection circuitry and a minimum dead-time circuitry have been integrated into this IC. Propagation delays are matched to simplify the HVICs use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high-side configuration, which operate up to 600V.
Drives up to 6-IGBT/MOSFET power devices
Integrated bootstrap functionality
Over-current protection
Over-temperature shutdown input
Advanced input filter
Integrated dead-time protection
Shoot-through (cross-conduction) protection
Under-voltage lockout for VCC and VBS
Enable/disable input and fault reporting
Adjustable fault clear timing
Separate logic and power grounds
Tolerant to negative transient voltage
Designed for use with bootstrap power supplies
Matched propagation delays for all channels
3.3V Input logic compatible
-40 to 125°C Operating temperature range
ESD sensitive device, take proper precaution while handling the device.

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