IXBH9N160G - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXBH9N160G
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW5195463
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1600V 9A 100000mW 3Pin(3+Tab) TO-247AD
Documentation

Datasheet

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IXBH9N160G Specifications

Attribute	Attribute Value

Part Number	IXBH9N160G
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW5195463
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	100 W
Power Dissipation	100000 mW
Breakdown Voltage (Collector to Emitter)	1600 V
Input Power (Max)	100 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	100000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This IXBH9N160G IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 1600 V. Its maximum power dissipation is 100000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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