IXFH24N80P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFH24N80P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW26348369
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

IXYS SEMICONDUCTOR IXFH24N80P Power MOSFET, N Channel, 24A, 800V, 400mohm, 10V, 5V
Documentation

Datasheet

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IXFH24N80P Specifications

Attribute	Attribute Value

Part Number	IXFH24N80P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW26348369
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.4 Ω
Polarity	N-Channel
Power Dissipation	650 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	800 V
Breakdown Voltage (Drain to Source)	800 V
Continuous Drain Current (Ids)	24.0 A
Rise Time	27 ns
Input Capacitance (Ciss)	7200pF @25V(Vds)
Fall Time	24 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	650W (Tc)
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.46 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFH24N80P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
Unclamped inductive switching (UIS) rated
International standard package
Low package inductance
Easy to mount
Space savings
High power density

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