IXFK80N50P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFK80N50P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW57290667
Category

MOSFET, MOSFET Transistor
Package

TO-264-3
Description

Trans MOSFET N-CH 500V 80A 3Pin(3+Tab) TO-264
Documentation

Datasheet

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IXFK80N50P Specifications

Attribute	Attribute Value

Part Number	IXFK80N50P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW57290667
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Voltage Rating (DC)	500 V
Current Rating	80.0 A
Drain to Source Resistance (on) (Rds)	65.0 mΩ
Polarity	N-Channel
Power Dissipation	1040 W
Input Capacitance	1.28 nF
Gate Charge	197 nC
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Continuous Drain Current (Ids)	80.0 A
Rise Time	27 ns
Input Capacitance (Ciss)	12700pF @25V(Vds)
Fall Time	16 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1040W (Tc)
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Size-Length	19.96 mm
Size-Width	5.13 mm
Size-Height	26.16 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

This IXFK80N50P power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1040000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.

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