IXFN44N60 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFN44N60
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW96160603
Category

High Voltage MOS Transistor
Package

SOT-227-4
Description

IXYS SEMICONDUCTOR IXFN44N60 Power MOSFET, N Channel, 44A, 600V, 130mohm, 10V, 4.5V
Documentation

Datasheet

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IXFN44N60 Specifications

Attribute	Attribute Value

Part Number	IXFN44N60
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW96160603
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Chassis
Number of Pins	3 Pin
Case/Package	SOT-227-4
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.13 Ω
Polarity	N-Channel
Power Dissipation	600 W
Threshold Voltage	4.5 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	44.0 A
Rise Time	55 ns
Isolation Voltage	2.50 kV
Input Capacitance (Ciss)	8900pF @25V(Vds)
Fall Time	45 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	600W (Tc)
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Material	Silicon
Weight	46.0 g
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFN44N60 is a HiPerFET™ N-channel enhancement-mode Single Die Power MOSFET features avalanche rated and fast intrinsic rectifier.
International standard package
miniBLOC with aluminium nitride isolation
Low RDS (ON) HDMOS™ process
Unclamped inductive switching (UIS) rated
Rugged polysilicon gate cell structure
Low package inductance
Easy to mount
Space savings
High power density
High dV/dt and low trr

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