IXFP7N100P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFP7N100P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW99582922
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB N-CH 1000V 7A
Documentation

Datasheet

IXFP7N100P Global Supplier

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IXFP7N100P Specifications

Attribute	Attribute Value

Part Number	IXFP7N100P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW99582922
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	1.9 Ω
Polarity	N-CH
Power Dissipation	300 W
Drain to Source Voltage (Vds)	1000 V
Breakdown Voltage (Drain to Source)	1000 V
Continuous Drain Current (Ids)	7A
Rise Time	49 ns
Input Capacitance (Ciss)	2590pF @25V(Vds)
Fall Time	44 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXFP7N100P power MOSFET. Its maximum power dissipation is 300000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.

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