IXFX20N120P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFX20N120P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW47512606
Category

High Voltage MOS Transistor
Package

TO-247-3
Description

IXYS SEMICONDUCTOR IXFX20N120P Power MOSFET, N Channel, 20A, 1.2kV, 0.57Ω, 10V, 6.5V
Documentation

Datasheet

IXFX20N120P Global Supplier

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IXFX20N120P Specifications

Attribute	Attribute Value

Part Number	IXFX20N120P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW47512606
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.57 Ω
Polarity	N-Channel
Power Dissipation	780 W
Threshold Voltage	6.5 V
Drain to Source Voltage (Vds)	1.2 kV
Breakdown Voltage (Drain to Source)	1200 V
Rise Time	45 ns
Input Capacitance (Ciss)	11100pF @25V(Vds)
Fall Time	70 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	780W (Tc)
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Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.34 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFX20N120P is a HiPerFET™ N-channel enhancement-mode Polar™ Power MOSFET features avalanche rated and fast intrinsic diode.
International standard package
Unclamped inductive switching (UIS) rated
Low package inductance
Easy to mount
Space savings
High power density

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