IXGH40N120B2D1 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXGH40N120B2D1
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW76957289
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1200V 75A 380000mW 3Pin(3+Tab) TO-247
Documentation

Datasheet

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IXGH40N120B2D1 Specifications

Attribute	Attribute Value

Part Number	IXGH40N120B2D1
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW76957289
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Power Dissipation	380 W
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	100 ns
Input Power (Max)	380 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	380000 mW
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.46 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The IXGH40N120B2D1 IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 380000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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