IXTK170P10P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXTK170P10P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW15326728
Category

MOSFET, MOSFET Transistor
Package

TO-264-3
Description

TO-264P-CH 100V 170A
Documentation

Datasheet

IXTK170P10P Global Supplier

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IXTK170P10P Specifications

Attribute	Attribute Value

Part Number	IXTK170P10P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW15326728
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	12 mΩ
Polarity	P-CH
Power Dissipation	890 W
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	170A
Rise Time	75 ns
Input Capacitance (Ciss)	12600pF @25V(Vds)
Fall Time	45 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	890W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Make an effective common source amplifier using this IXTK170P10P power MOSFET from Ixys Corporation. Its maximum power dissipation is 890000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

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