NDS355AN - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NDS355AN
Manufacturer

Fairchild
ChipWorker Part#

CW8094196
Category

MOSFET, MOSFET Transistor
Package

SOT-23-3
Description

FAIRCHILD SEMICONDUCTOR NDS355AN MOSFET Transistor, N Channel, 1.7A, 30V, 0.065Ω, 10V, 1.6V
Documentation

Datasheet

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NDS355AN Specifications

Attribute	Attribute Value

Part Number	NDS355AN
Manufacturer	Fairchild
ChipWorker Part#	CW8094196
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	30.0 V
Current Rating	1.70 A
Power Rating	500 mW
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.065 Ω
Polarity	N-Channel
Power Dissipation	500 mW
Threshold Voltage	1.6 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	1.70 A
Rise Time	32 ns
Input Capacitance (Ciss)	195pF @15V(Vds)
Input Power (Max)	460 mW
Fall Time	5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500mW (Ta)
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Size-Length	2.92 mm
Size-Width	1.4 mm
Size-Height	0.94 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The NDS355AN is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications in PCMCIA cards, other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount package. It comes with industry standard outline surface-mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
High density cell design for extremely low RDS (ON)
Exceptional ON-resistance and maximum DC current capability

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