IXTP3N120 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXTP3N120
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW6490975
Category

High Voltage MOS Transistor
Package

TO-220-3
Description

TO-220 N-CH 1200V 3A
Documentation

Datasheet

IXTP3N120 Global Supplier

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IXTP3N120 Specifications

Attribute	Attribute Value

Part Number	IXTP3N120
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW6490975
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	1.20 kV
Current Rating	3.00 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	4.5 Ω
Polarity	N-Channel
Power Dissipation	200 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	1.2 kV
Continuous Drain Current (Ids)	3.00 A
Rise Time	35 ns
Reverse recovery time	700 ns
Input Capacitance (Ciss)	1350pF @25V(Vds)
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXTP3N120 is a high voltage N-channel enhancement-mode Power MOSFET features avalanche rated and rated for unclamped inductive load switching (UIS).
High dV/dt
International standard package
Low RDS (ON)
UL94V-0 Flammability rating
Easy to mount
Space savings
High power density

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