IXTP4N80P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXTP4N80P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW54548488
Category

High Voltage MOS Transistor
Package

TO-220-3
Description

TO-220AB N-CH 800V 3.6A
Documentation

Datasheet

IXTP4N80P Global Supplier

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IXTP4N80P Specifications

Attribute	Attribute Value

Part Number	IXTP4N80P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW54548488
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	3 Ω
Polarity	N-Channel
Power Dissipation	100 W
Threshold Voltage	5.5 V
Drain to Source Voltage (Vds)	800 V
Continuous Drain Current (Ids)	4.00 A
Rise Time	24 ns
Reverse recovery time	600 ns
Input Capacitance (Ciss)	750pF @25V(Vds)
Fall Time	29 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	100W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXTP4N80P is a PolarHV™ N-channel enhancement-mode Power MOSFET features avalanche rated and low package inductance.
International standard package
Unclamped inductive switching (UIS) rated
Easy to mount
Space savings
High power density

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