IXTQ100N25P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXTQ100N25P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW12333226
Category

MOSFET, MOSFET Transistor
Package

TO-3-3
Description

Trans MOSFET N-CH 250V 100A 3Pin(3+Tab) TO-3P
Documentation

Datasheet

IXTQ100N25P Global Supplier

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IXTQ100N25P Specifications

Attribute	Attribute Value

Part Number	IXTQ100N25P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW12333226
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.027 Ω
Polarity	N-Channel
Power Dissipation	600 W
Threshold Voltage	5 V
Input Capacitance	6300 pF
Drain to Source Voltage (Vds)	250 V
Continuous Drain Current (Ids)	100 A
Rise Time	26 ns
Input Capacitance (Ciss)	6300pF @25V(Vds)
Input Power (Max)	600 W
Fall Time	28 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	600W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXTQ100N25P is a PolarHT™ N-channel enhancement-mode standard Power MOSFET offers reduced static drain-to-source ON-resistance and high power density.
International standard packages
Avalanche rating
Unclamped inductive switching (UIS) rating
Low package inductance - Easy to drive and to protect
Easy to mount
Space saving

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