JANTXV2N2907AUB - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

JANTXV2N2907AUB
Manufacturer

Microsemi
ChipWorker Part#

CW61025045
Category

BJT Transistor, BJT
Package

SMD-4
Description

JANTXV Series 60V 600mA SMT PNP Small Signal Silicon Transistor - 4UB
Documentation

Datasheet

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JANTXV2N2907AUB Specifications

Attribute	Attribute Value

Part Number	JANTXV2N2907AUB
Manufacturer	Microsemi
ChipWorker Part#	CW61025045
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SMD-4
Power Dissipation	500 mW
Input Capacitance	30 pF
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	100 @150mA, 10V
Input Power (Max)	500 mW
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	500 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Pack
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

Jump-start your electronic circuit design with this versatile PNP JANTXV2N2907AUB GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

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