LE25U40CMDTWG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LE25U40CMDTWG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW19005461
Category

Flash Memory, Flash
Package

SOIC-8
Description

Flash Memory, 4Mbit, 512K x 8Bit, 40MHz, SPI, SOIC, 8Pins
Documentation

Datasheet

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LE25U40CMDTWG Specifications

Attribute	Attribute Value

Part Number	LE25U40CMDTWG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW19005461
Category	Flash Memory, Flash
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	2.30V (min)
Supply Current	12 mA
Number of Positions	8 Position
Clock Speed	40 MHz
Number of Bits	8 Bit
Access Time	11 ns
Memory Size	500000 B
Access Time(Max)	11 ns
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.3V ~ 3.6V
Supply Voltage (Max)	3.6 V
Supply Voltage (Min)	2.3 V
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-40℃ ~ 85℃ (TA)
Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The LE25U40CMDTWG is a CMOS LSI 4Mbit (512K x 8) serial flash memory in 8 pin SOIC package. This SPI bus flash memory device adds a high performance dual output and dual I/O function. While making most of the features inherent to a serial flash memory device, the LE25U40CMD is housed in an 8 pin ultra miniature package. All these features make this device ideally suited to storing program in applications such as portable information devices which are required to have increasingly more compact dimensions. The LE25U40CMD also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity. It has highly reliable read/write including 100000 times rewrite times, 40ms small sector erase time (150ms maximum), 80ms sector erase time (250ms maximum), 250ms chip erase time (2s maximum), 4ms/256bytes page program time (5ms/256bytes maximum).
Read/write operations enabled by single 2.5V power supply, 2.3V to 3.6V supply voltage range
High data transfer rate with 40MHz operating frequency
CMOS standby current of 50µA and power down standby current of 10µA
20 years data retention period, 100000times/sector (program/erase) re-writing frequency
SPI mode 0, mode 3 supported, dual output and dual I/O supported
4Kbytes/small sector and 64Kbytes/sector size
Small sector erase, sector erase, chip erase functions
Page program function (256bytes/page) and block protect function
Ready/busy information, protect information status functions
Operating ambient temperature range from -40°C to 85°C

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