LM8335EVM - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

LM8335EVM
Manufacturer

TI
ChipWorker Part#

CW18860800
Category

Microprocessor Development Kit
Description

LM8335 General-Purpose Output Expander with MIPI RFFE Host Interface Evaluation Module Board
Documentation

Datasheet

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LM8335EVM Specifications

Attribute	Attribute Value

Part Number	LM8335EVM
Manufacturer	TI
ChipWorker Part#	CW18860800
Category	Microprocessor Development Kit
Documentation	Datasheet
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	0 ℃
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Product Lifecycle Status	Unknown
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The LM8335EVM evaluation module helps designers evaluate the operation and performance of LM8335 MIPI RFFE to general purpose output (GPO) expander. The LM8335 general purpose output expander is a dedicated device to provide flexible and general purpose, host programmable output expansion functions. This device communicates with a host processor through a MIPI RFFE Interface. Eight general purpose outputs (GPO) can be configured by the host controller as drive high/low/high-z. Weak pull ups (PU) or weak pull downs (PD) can be enabled. Upon power on, the LM8335 default configuration is for all GPO to be set based on the state of the CFG pin. After startup, any changes to the default configuration must be sent from the host via the MIPI RFFE host interface.
MIPI RFFE interface version 1.10 compliant
Supports output expansion
Host interface address select pin
Three sources for chip reset , VIO input pin, POR and software commanded reset
Pin configurable initial state
Low standby and active current
Onchip power on reset (POR)
1.8V ± 0.15V MIPI RFFE operation (VIO)
1.8V ± 0.15V core supply (VDD)
1.65V to 3.6V GPO supply (VDDIO)
This device has limited built in ESD protection. The leads should be shorted together or device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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