MAT14ARZ - ADI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MAT14ARZ
Manufacturer

ADI
ChipWorker Part#

CW1485167
Category

BJT Transistor, BJT
Package

SOIC-14
Description

SOIC NPN 40V 0.03A
Documentation

Datasheet

MAT14ARZ Global Supplier

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MAT14ARZ Specifications

Attribute	Attribute Value

Part Number	MAT14ARZ
Manufacturer	ADI
ChipWorker Part#	CW1485167
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	14 Pin
Case/Package	SOIC-14
Frequency	300 MHz
Number of Positions	14 Position
Polarity	NPN
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	0.03A
hFE Min	200
DC Current Gain (hFE)	300
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
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Size-Length	8.75 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-25℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MAT14ARZ is a 40V quad monolithic NPN Transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT14ARZ includes high gain (300 minimum) over a wide range of collector current, low noise (3nV/√Hz maximum at 100Hz, IC = 1mA) and excellent logarithmic conformance. The MAT14ARZ also features a low offset voltage of 100µV typical and tight current gain matching to within 4%. Each transistor of the MAT14ARZ is individually tested to data sheet specifications. For matching parameters (offset voltage, input offset current and gain match), each of the dual transistor combinations are verified to meet stated limits. Device performance is guaranteed at an ambient temperature of 25°C and over the industrial temperature range. The long-term stability of matching parameters is guaranteed by the protection diodes across the base emitter junction of each transistor.
400µV Maximum low offset voltage
300 Minimum high current gain
4% Maximum excellent current gain match
Low voltage noise density at 100Hz, 1mA 3nV/√Hz maximum
Excellent log conformance
ESD sensitive device, take proper precaution while handling the device.

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