MJD122G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD122G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW57544
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK NPN 100V 8A
Documentation

Datasheet

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MJD122G Specifications

Attribute	Attribute Value

Part Number	MJD122G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW57544
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	100 V
Current Rating	8.00 A
Power Rating	1.75 W
Halogen Free Status	Halogen Free
Output Voltage	100 V
Output Current	8 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1.75 W
Breakdown Voltage (Collector to Emitter)	100 V
Thermal Resistance	71.4℃/W (RθJA)
Continuous Collector Current	8A
hFE Min	1000
hFE Max	12000
Input Power (Max)	1.75 W
DC Current Gain (hFE)	2500
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Gain Bandwidth	4MHz (Min)
Power Dissipation (Max)	1750 mW
Input Voltage	5 V
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17
ECCN Code	EAR99

Product Description

The MJD122G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. Thins transistor is surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series and TIP125-TIP127 series as well has monolithic construction with built-in base-emitter shunt resistor.
Lead formed for surface mount applications in plastic sleeves
High DC current gain
Epoxy meets UL 94V-0 rating
AEC-Q101 qualified

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