MJD122T4 ,BJT Transistor, BJT - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

190 points

Part No

MJD122T4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW3599711
Category

BJT Transistor, BJT
Package

TO-252-3
Description

Trans Darlington NPN 100V 8A 20000mW 3Pin(2+Tab) TO-252 T/R
Documentation

Datasheet
Ships from

Moscow
Наличие

60999 pcs In Stock
Estimated Price

$ 0.14

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MJD122T4 Specifications

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Attribute	Attribute Value

Part Number	MJD122T4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW3599711
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Voltage Rating (DC)	100 V
Current Rating	5.00 A
Power Rating	1.75 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	20 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	1000 @4A, 4V
Input Power (Max)	20 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	20000 mW
	expand all
Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

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Product Description

Description
The device is manufactured using Epitaxial-base technology for high performance. PNP type is MJD127.
Features
■ Low base drive requirements
■ Integrated antiparallel collector-emitter diode
■ Through hole TO-251 (IPAK) power package in tube (suffix “-1”)
■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”) Applications
■ General purpose switching and amplifier

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