MJE5852G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE5852G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW4631767
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB PNP 400V 8A
Documentation

Datasheet

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MJE5852G Specifications

Attribute	Attribute Value

Part Number	MJE5852G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW4631767
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	-400 V
Current Rating	-8.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	80 W
Breakdown Voltage (Collector to Emitter)	400 V
Thermal Resistance	1.25℃/W (RθJC)
Continuous Collector Current	8A
hFE Min	5 @5A, 5V
Input Power (Max)	80 W
DC Current Gain (hFE)	15
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	80000 mW
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Size-Length	10.28 mm
Size-Width	4.83 mm
Size-Height	9.28 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MJE5852G is a -400V PNP silicon Bipolar Power Transistor designed for high voltage, high speed and power switching in inductive circuits where fall time is critical. This switch-mode series transistor is particularly suited for line operated switch-mode applications.
Fast turn-off times
Complementary to the MJE13007 series
6V Emitter to base voltage (VEBO)
16ADC Peak collector current
4ADC Base current (IB)
1.25°C/W Thermal resistance, junction to case

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