MJW21194 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJW21194
Manufacturer

ON Semiconductor
ChipWorker Part#

CW135486025
Category

BJT Transistor, BJT
RoHS

Lead free / RoHS Compliant
Description

TO-247 NPN 250V 16A
Documentation

Datasheet

MJW21194 Global Supplier

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MJW21194 Specifications

Attribute	Attribute Value

Part Number	MJW21194
Manufacturer	ON Semiconductor
ChipWorker Part#	CW135486025
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-247-3
Voltage Rating (DC)	250 V
Current Rating	16.0 A
Polarity	NPN
Power Dissipation	200 W
Gain Bandwidth Product	4 MHz
Breakdown Voltage (Collector to Emitter)	250 V
Continuous Collector Current	16A
hFE Min	20 @8A, 5V
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
	expand all
Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.08 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
MJW21193 (PNP)
MJW21194 (NPN)
The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
•Total Harmonic Distortion Characterized
•High DC Current Gain −hFE= 20 Min @ IC= 8 Adc
•Excellent Gain Linearity
•High SOA: 2.25 A, 80 V, 1 Second

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