MTP2P50EG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MTP2P50EG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW77271264
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220AB P-CH 500V 2A
Documentation

Datasheet

MTP2P50EG Global Supplier

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MTP2P50EG Specifications

Attribute	Attribute Value

Part Number	MTP2P50EG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW77271264
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	-500 V
Current Rating	-2.00 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	6 Ω
Polarity	P-Channel
Power Dissipation	75 W
Input Capacitance	1.18 nF
Gate Charge	27.0 nC
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	2.00 A
Rise Time	14 ns
Input Capacitance (Ciss)	1183pF @25V(Vds)
Input Power (Max)	75 W
Fall Time	19 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	75W (Tc)
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Size-Length	10.53 mm
Size-Width	4.83 mm
Size-Height	15.75 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MTP2P50EG is a P-channel high voltage Power MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. It is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Robust high voltage termination
Avalanche energy specified
Source-to-drain diode recovery time comparable to a discrete
Fast recovery diode
Diode is characterized for use in bridge circuits
IDSS and VDS (on) specified at elevated temperature

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