NCP43080 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NCP43080
Manufacturer

ON Semiconductor
ChipWorker Part#

CW1242880175
Description

Synchronous Rectifier Controller
Documentation

Datasheet

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Product Description

The NCP43080 is a synchronous rectifier controller for switch mode power supplies. The controller enables high efficiency designs for flyback, quasi resonant flyback and LLC topologies. Externally adjustable minimum off−time and on−time blanking periods provides flexibility to drive various MOSFET package types and PCB layout. A reliable and noise less operation of the SR system is insured due to the Self Synchronization feature. The NCP4308 also utilizes Kelvin connection of the driver to the MOSFET to achieve high efficiency operation at full load. The precise turn−off threshold, extremely low turn−off delay time and high sink current capability of the driver allow the maximum synchronous rectification MOSFET conduction time. The high accuracy driver and 5 V gate clamp make it ideally suited for directly driving GaN devices. To provide more flexibility in PCB layout there are two versions of this product. NCP4308 does NOT have LLD function
Features | | Benefits
---|---|---
| | | | |
Self−Contained Control of Synchronous Rectifier in CCM, DCM and QR for Flyback or LLC Applications
| |
Robust design during power excurtion
Precise True Secondary Zero Current Detection
| |
Provides negligible switching losses and prolongs FET life
Rugged Current Sense Pin (up to 150 V)
| |
Robustness
Adjustable Minimum ON−Time
| |
Improves efficiency and design flexibility
Adjustable Minimum OFF-Time with Ringing Detection
| |
Improves efficiency and design flexibility
Adjustable Maximum ON−Time for CCM Controlling of Primary QR Controller
| |
Improves efficiency and design flexibility
Operating Voltage Range up to VCC = 35 V
| |
Advantage with multiple Vout such as smart charging or USB-PD
8 A / 4 A Peak Current Sink / Source Drive Capability
| |
higher drive strenght provides higher efficiency
GaN Transistor Driving Capability (options A and C)
| |
GaN FET further improve efficiency and solution size
Low Startup Current Consumption
| |
Improves standby power consumption
Maximum Operation Frequency up to 1 MHz
| |
Provides higher OFF-ON time accuracy, thus improving efficiency
Improved Robust Self Synchronization Capability
| |
These are Pb−Free Devices
| |

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