NDB6020P - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NDB6020P
Manufacturer

Fairchild
ChipWorker Part#

CW47911292
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

FAIRCHILD SEMICONDUCTOR NDB6020P MOSFET Transistor, P Channel, -24A, -20V, 0.041Ω, -4.5V, -700mV
Documentation

Datasheet

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NDB6020P Specifications

Attribute	Attribute Value

Part Number	NDB6020P
Manufacturer	Fairchild
ChipWorker Part#	CW47911292
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	-20.0 V
Current Rating	-24.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.041 Ω
Polarity	P-Channel
Power Dissipation	60 W
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	-20.0 V
Breakdown Voltage (Gate to Source)	±8.00 V
Continuous Drain Current (Ids)	24.0 A
Rise Time	27 ns
Input Capacitance (Ciss)	1590pF @10V(Vds)
Input Power (Max)	60 W
Fall Time	70 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	60W (Tc)
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	11.33 mm
Operating Temperature	-65℃ ~ 175℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

General Description
SuperSOTTM -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics,and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
-1.2A, -20 V, RDS(ON) = 0.27 W@ VGS = -2.7 V
RDS(ON) = 0.2 W@ VGS = -4.5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V.
Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability.
Compact industry standard SOT-23 surface Mount package.

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