NDS0605 ,MOSFET, MOSFET Transistor - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Popularity Score

125 points

Part No

NDS0605
Manufacturer

ON Semiconductor
ChipWorker Part#

CW1960300
Category

MOSFET, MOSFET Transistor
Package

SOT-23-3
Description

Trans MOSFET P-CH 60V 0.18A 3Pin SOT-23 T/R
Documentation

Datasheet
Ships from

Moscow
Наличие

24720 pcs In Stock
Estimated Price

$ 0.17

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NDS0605 Specifications

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Attribute	Attribute Value

Part Number	NDS0605
Manufacturer	ON Semiconductor
ChipWorker Part#	CW1960300
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	5 Ω
Power Dissipation	0.36 W
Threshold Voltage	1.7 V
Drain to Source Voltage (Vds)	60 V
Rise Time	6.3 ns
Input Capacitance (Ciss)	79pF @25V(Vds)
Input Power (Max)	360 mW
Fall Time	7.5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	360 mW
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Size-Length	2.92 mm
Size-Width	1.3 mm
Size-Height	0.93 mm
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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Product Description

This P-Channel enhancement mode power field effect transistor is produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0605 can be used, with a minimum of effort, in most applications requiring up to 0.18A DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
Features
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-0.18 A, -60 V. RDS(ON) = 5 Ω @ VGS= -10 V.
Voltage controlled p-channel small signal switch.
High density cell design for extremely low RDS(ON).
High saturation current.

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