NDS9945 - Fairchild

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NDS9945
Manufacturer

Fairchild
ChipWorker Part#

CW11508588
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

Trans MOSFET N-CH 60V 3.5A 8Pin SOIC N T/R
Documentation

Datasheet

NDS9945 Global Supplier

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NDS9945 Specifications

Attribute	Attribute Value

Part Number	NDS9945
Manufacturer	Fairchild
ChipWorker Part#	CW11508588
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	60.0 V
Current Rating	3.50 A
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.1 Ω
Polarity	N-Channel, Dual N-Channel
Power Dissipation	2 W
Threshold Voltage	1.7 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	3.50 A
Rise Time	7.5 ns
Input Capacitance (Ciss)	345pF @25V(Vds)
Input Power (Max)	900 mW
Fall Time	7 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2 W
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Size-Length	4.9 mm
Size-Width	3.9 mm
Size-Height	1.57 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The NDS9945 is a dual N-channel enhancement-mode MOSFET produced using high cell density and DMOS technology. This high density process is especially tailored to provide superior switching performance and minimize ON-state resistance. The device is particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
High density cell design for extremely low RDS (ON)
High power and current handling capability in a widely used surface-mount package
±20V Gate to source voltage
3.5A Continuous drain current
10A Pulsed drain current

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