NGP15N41CLG - ON Semiconductor
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoNGP15N41CLG
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ManufacturerON Semiconductor
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ChipWorker Part#CW116460930
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CategoryIGBT Transistor, IGBT Module
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PackageTO-220-3
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DescriptionTrans IGBT Chip N-CH 440V 15A 3Pin(3+Tab) TO-220AB Rail
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DocumentationDatasheet
Payment Methods and Delivery
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NGP15N41CLG Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | NGP15N41CLG |
| Manufacturer | ON Semiconductor |
| ChipWorker Part# | CW116460930 |
| Category | IGBT Transistor, IGBT Module |
| Documentation | Datasheet |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Voltage Rating (DC) | 410 V |
| Current Rating | 15.0 A |
| Number of Positions | 3 Position |
| Power Dissipation | 107 W |
| Rise Time | 4.00 ns |
| Breakdown Voltage (Collector to Emitter) | 440 V |
| Input Power (Max) | 107 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 107000 mW |
| expand all | |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/12/17 |
| ECCN Code | EAR99 |
Product Description
- N−Channel DPAK, D2PAK and TO−220
- This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
- Features
- • Ideal for Coil−on−Plug Applications
- • DPAK Package Offers Smaller Footprint and Increased Board Space
- • Gate−Emitter ESD Protection
- • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load
- • Integrated ESD Diode Protection
- • New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area
- • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices
- • Low Saturation Voltage
- • High Pulsed Current Capability
- • Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
- • These are Pb−Free Devices
Delivery
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Ordering Information
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