NGTB05N60R2DT4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NGTB05N60R2DT4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW20144000
Category

IGBT Transistor, IGBT Module
Package

TO-252-3
Description

Trans IGBT Chip N-CH 600V 16A 56000mW 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

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NGTB05N60R2DT4G Specifications

Attribute	Attribute Value

Part Number	NGTB05N60R2DT4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW20144000
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Power Dissipation	56 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	70 ns
Input Power (Max)	56 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	56 W
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Operating Temperature	175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

This fast-switching NGTB05N60R2DT4G IGBT transistor from ON Semiconductor will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 56000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It is made in a single dual collector configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

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