NGTB50N65FL2WG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NGTB50N65FL2WG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW10229186
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 650V 100A 417000mW 3Pin(3+Tab) TO-247 Tube
Documentation

Datasheet

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NGTB50N65FL2WG Specifications

Attribute	Attribute Value

Part Number	NGTB50N65FL2WG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW10229186
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	417000 mW
Breakdown Voltage (Collector to Emitter)	650 V
Reverse recovery time	94 ns
Input Power (Max)	417 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	417000 mW
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

IGBT Trench Field Stop 650V 100A 417W Through Hole TO-247-3

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