NST65010MW6T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NST65010MW6T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW29633040
Category

BJT Transistor, BJT
Package

SOT-363-6
Description

SOT-363 PNP 65V 0.1A
Documentation

Datasheet

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NST65010MW6T1G Specifications

Attribute	Attribute Value

Part Number	NST65010MW6T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW29633040
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-363-6
Frequency	100 MHz
Number of Positions	6 Position
Polarity	PNP
Power Dissipation	380 mW
Breakdown Voltage (Collector to Emitter)	65 V
Continuous Collector Current	0.1A
hFE Min	220 @2mA, 5V
Input Power (Max)	380 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	380 mW
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Size-Length	2.2 mm
Size-Width	1.35 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Do you require a transistor in your circuit operating in the high-voltage range? This NST65010MW6T1G general purpose bipolar junction transistor, developed by ON Semiconductor, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 0 V. Its maximum power dissipation is 0 mW. It has a maximum collector emitter voltage of 0 V and a maximum emitter base voltage of 0 V. This bipolar junction transistor has a minimum operating temperature of 0 °C and a maximum of 50 °C.

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