NTF3055L108T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTF3055L108T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW3388900
Category

MOSFET, MOSFET Transistor
Package

TO-261-4
Description

Power MOSFET 60V 3A 120mOhm Single N-Channel SOT-223 Logic Level, SOT-223 (TO-261) 4 LEAD, 1000-REEL
Documentation

Datasheet

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NTF3055L108T1G Specifications

Attribute	Attribute Value

Part Number	NTF3055L108T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW3388900
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Voltage Rating (DC)	60.0 V
Current Rating	3.00 A
Number of Channels	1 Channel
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.12 Ω
Polarity	N-Channel
Power Dissipation	2.1 W
Threshold Voltage	1.68 V
Input Capacitance	313pF @25V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	68 V
Breakdown Voltage (Gate to Source)	±15.0 V
Continuous Drain Current (Ids)	3.00 A
Rise Time	35 ns
Input Capacitance (Ciss)	440pF @25V(Vds)
Input Power (Max)	1.3 W
Fall Time	27 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.3W (Ta)
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Size-Length	6.5 mm
Size-Width	3.5 mm
Size-Height	1.57 mm
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The NTF3055L108T1G is a N-channel logic level Power MOSFET, designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
AEC-Q101 Qualified
PPAP capable

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