NTR4502PT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NTR4502PT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW48000
Category

MOSFET, MOSFET Transistor
Package

SOT-23-3
Description

SOT-23P-CH 30V 1.13A
Documentation

Datasheet

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NTR4502PT1G Specifications

Attribute	Attribute Value

Part Number	NTR4502PT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW48000
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	-30.0 V
Current Rating	-1.95 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.2 Ω
Polarity	P-Channel
Power Dissipation	1.25 W
Threshold Voltage	3 V
Input Capacitance	200 pF
Gate Charge	10.0 nC
Drain to Source Voltage (Vds)	30 V
Continuous Drain Current (Ids)	1.95 mA, 1.95 A
Rise Time	12 ns
Input Capacitance (Ciss)	200pF @15V(Vds)
Input Power (Max)	400 mW
Fall Time	17.5 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	400 mW
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Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The NTR4502PT1G is a P-channel Power MOSFET offers -30V drain source voltage and -1.95A continuous drain current. It is suitable for DC to DC conversion, load/power switch for portables and computing, motherboard, notebooks, camcorders, digital cameras and battery charging circuits.
Leading planar technology for low gate charge/fast switching
Low RDS (ON) for low conduction losses
Surface-mount for small footprint (3 x 3mm)
-55 to 150°C Operating junction temperature range

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