OPA659IDBVT - TI
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoOPA659IDBVT
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ManufacturerTI
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ChipWorker Part#CW1979788
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CategoryOperational Amplifier, OP Amp IC
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PackageSOT-23-5
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DescriptionTEXAS INSTRUMENTS OPA659IDBVT Operational Amplifier, Single, 1 Amplifier, 650MHz, 2550V/µs, ± 3.5V to ± 6.5V, SOT-23, 5Pins
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DocumentationDatasheet
Payment Methods and Delivery
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OPA659IDBVT Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | OPA659IDBVT |
| Manufacturer | TI |
| ChipWorker Part# | CW1979788 |
| Category | Operational Amplifier, OP Amp IC |
| Documentation | Datasheet |
| Mounting Style | Surface Mount |
| Number of Pins | 5 Pin |
| Case/Package | SOT-23-5 |
| Output Current | ≤100 mA |
| Supply Current | 32 mA |
| Number of Circuits | 1 Circuit |
| Number of Channels | 1 Channel |
| Number of Positions | 5 Position |
| Common Mode Rejection Ratio | 68dB ~ 70dB |
| Input Offset Drift | 10.0 µV/K |
| Bandwidth | 650 MHz |
| Slew Rate | 2.55 kV/μs |
| Gain Bandwidth Product | 350 MHz |
| Input Offset Voltage | 1 mV |
| Input Bias Current | 10 pA |
| Available Channels | S |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| 3dB Bandwidth | 650 MHz |
| Gain Bandwidth | 350 MHz |
| Minimum CMRR Range | 68 dB |
| Supply Voltage | 7V ~ 13V |
| expand all | |
| Size-Length | 3.05 mm |
| Size-Width | 1.75 mm |
| Size-Height | 1.3 mm |
| Operating Temperature | -40℃ ~ 85℃ |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/06/15 |
Product Description
- The OPA659IDBVT is a 650MHz unity gain stable JFET Input Amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope front-end amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection. The wide unity-gain bandwidth is complemented by a very high 2550V/µs slew rate. The high input impedance and low bias current provided by the JFET input are supported by the low input voltage noise to achieve a very low integrated noise in wideband photodiode transimpedance applications.
- -78dBc at 10MHz Excellent THD
- 8.9nV/√Hz Low input voltage noise
- 8ns Fast overdrive recovery
- 8ns Fast setting time
- ±1mV Low input offset voltage
- ±10pA Low input bias current
- 70mA High output current
- This IC can be damaged by ESD. We recommend that all ICs be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
Delivery
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Ordering Information
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