P6SMB200AT3G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

P6SMB200AT3G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW52582414
Category

TVS Diode
Package

DO-214AA
Description

SMB 171V 600W
Documentation

Datasheet

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P6SMB200AT3G Specifications

Attribute	Attribute Value

Part Number	P6SMB200AT3G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW52582414
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	2 Pin
Case/Package	DO-214AA
Voltage Rating (DC)	200 V
Operating Voltage	171 V
Capacitance	115 pF
Power Rating	600 W
Breakdown Voltage	200 V
Number of Circuits	1 Circuit
Number of Positions	2 Position
Power Dissipation	600 W
Clamping Voltage	274 V
Max Repetitive Reverse Voltage (Vrrm)	171V
Test Current	1 mA
Max Breakdown Voltage	210 V
Peak Pulse Power	600 W
Min Breakdown Voltage	190 V
Reverse Breakdown Voltage	190 V
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Junction Temperature	-65℃ ~ 150℃
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Size-Length	4.6 mm
Size-Width	3.56 mm
Size-Height	2.2 mm
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The P6SMB series unidirectional Zener Transient Voltage Suppressor Diode designed to protect voltage sensitive components from high voltage and high energy transients. It has excellent clamping capability, high surge capability, low Zener impedance and fast response time.
5.8 to 171V Working peak reverse voltage range
600W @ 1ms Peak power
ESD rating of Class 3 (>16kV) per human body model
Maximum clamp voltage @ peak pulse current
<5µA above 10V Low leakage current
6.8 to 200V Standard Zener breakdown voltage range
<1ns Response time
-65 to 150°C Operating temperature range

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