PBSS4350X - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PBSS4350X
Manufacturer

NXP
ChipWorker Part#

CW63145266
Category

BJT Transistor, BJT
Package

SOT-89
Description

SOT-89 NPN 50V 3A
Documentation

Datasheet

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PBSS4350X Specifications

Attribute	Attribute Value

Part Number	PBSS4350X
Manufacturer	NXP
ChipWorker Part#	CW63145266
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-89
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	550 mW
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	3A
hFE Min	100
DC Current Gain (hFE)	300
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1600 mW
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Size-Length	4.6 mm
Size-Width	2.6 mm
Size-Height	1.6 mm
Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
HK STC License	NLR

Product Description

The PBSS4350X is a 3A NPN breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. It offers collector pad for good heat transfer.
Low collector-emitter saturation voltage VCEsat
High collector current capabilities of IC and ICM
Higher efficiency leading to less heat generation
Reduced printed-circuit board requirements
PNP complement is PBSS5350X
S43 Marking code

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