PCF8574RGTR - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PCF8574RGTR
Manufacturer

TI
ChipWorker Part#

CW4971119
Category

Interface IC, Interface Controller
Package

QFN-16
Description

I/O Expander, 8Bit, 100kHz, I2C, 2.5V, 6V, QFN
Documentation

Datasheet

PCF8574RGTR Global Supplier

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PCF8574RGTR Specifications

Attribute	Attribute Value

Part Number	PCF8574RGTR
Manufacturer	TI
ChipWorker Part#	CW4971119
Category	Interface IC, Interface Controller
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	16 Pin
Case/Package	QFN-16
Supply Voltage (DC)	2.50V ~ 6.00V
Number of Outputs	8 Output
Number of Positions	16 Position
Clock Speed	100 kHz
Voltage Nodes	5.00 V, 3.30 V
Number of Inputs and Outputs	8 Input IO
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	2.5V ~ 6V
Supply Voltage (Max)	6 V
Supply Voltage (Min)	2.5 V
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Operating Temperature	-40℃ ~ 85℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The PCF8574RGTR is a remote 8-bit I/O Expander for I²C-bus designed for VCC operation. The PCF8574 device provides general-purpose remote I/O expansion for most microcontroller families by way of the I²C interface (serial clock (SCL), serial data (SDA)). The device features an 8-bit quasi-bidirectional I/O port (P0-P7), including latched outputs with high-current drive capability for directly driving LEDs. Each quasi-bidirectional I/O can be used as an input or output without the use of a data-direction control signal. At power on, the I/Os are high. In this mode, only a current source to VCC is active.
10µA Maximum low standby-current consumption
I²C to parallel port expander
Open-drain interrupt output
Compatible with most microcontrollers
Latched outputs with high-current drive capability for directly driving LEDs
Latch-up performance exceeds 100mA per JESD 78
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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