PHPT610030NPKX - Nexperia

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

PHPT610030NPKX
Manufacturer

Nexperia
ChipWorker Part#

CW41046561
Category

BJT Transistor, BJT
Package

SOT-1205
Description

TRANS NPN/PNP 100V 3A 8LFPAK
Documentation

Datasheet

PHPT610030NPKX Global Supplier

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PHPT610030NPKX Specifications

Attribute	Attribute Value

Part Number	PHPT610030NPKX
Manufacturer	Nexperia
ChipWorker Part#	CW41046561
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOT-1205
Number of Positions	8 Position
Power Dissipation	1.25 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	80 @1A, 10V
Input Power (Max)	1.25 W
DC Current Gain (hFE)	10
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	25000 mW
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Operating Temperature	175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status

Product Description

These high power bipolar transistors, housed in LFPAK56 (Power-S08/SOT669) packages, deliver DPAK-like thermal and electrical performance in just half the footprint. Offering reliable, energy-efficient performance, they are AEC-Q101 qualified and support high-temperature operation (175 °C).
High power dissipation (Ptot)
Suitable for high-temperature applications (175 °C)
Space-saving 5 x 6 mm package outline is half the size of equivalent transistors in DPAK, SOT223, and other packages
Low profile (1 mm)
High reliability and mechanical ruggedness thanks to solid copper clip (no wires)
High energy efficiency due to less heat generation
AEC-Q101 qualified
Growing, furtureproof portfolio

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
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- Decapsulation control
- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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