SIHG47N60E-GE3 ,High Voltage MOS Transistor - Vishay Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

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Part No

SIHG47N60E-GE3
Manufacturer

Vishay Semiconductor
ChipWorker Part#

CW111107526
Category

High Voltage MOS Transistor
Package

TO-247-3
Description

VISHAY SIHG47N60E-GE3 Power MOSFET, N Channel, 47A, 600V, 0.053Ω, 10V, 2.5V
Documentation

Datasheet
Ships from

Moscow
Наличие

1985 pcs In Stock
Estimated Price

$ 4.76

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SIHG47N60E-GE3 Specifications

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Attribute	Attribute Value

Part Number	SIHG47N60E-GE3
Manufacturer	Vishay Semiconductor
ChipWorker Part#	CW111107526
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.053 Ω
Polarity	N-Channel
Power Dissipation	357 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Rise Time	11 ns
Input Capacitance (Ciss)	4810pF @100V(Vds)
Fall Time	13 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	357 W
	expand all
Size-Length	15.87 mm
Size-Width	5.31 mm
Size-Height	20.7 mm
Operating Temperature	-55℃ ~ 150℃
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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Product Description

The SIHG47N60E-GE3 is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
Low figure-of-merit(FOM) RON x Qg
Low input capacitance (CISS)
Reduced switching and conduction losses
Ultra low gate charge
Avalanche energy rated
Halogen-free

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