SN6501DBVT - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SN6501DBVT
Manufacturer

TI
ChipWorker Part#

CW1207526
Category

Battery Management IC
Package

SOT-23-5
Description

Conv DC-DC 3V to 5.5V Non-Inv/Inv/Step Up/Step Down Single-Out 0V to 11V 0.35A 5Pin SOT-23 T/R
Documentation

Datasheet

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SN6501DBVT Specifications

Attribute	Attribute Value

Part Number	SN6501DBVT
Manufacturer	TI
ChipWorker Part#	CW1207526
Category	Battery Management IC
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	5 Pin
Case/Package	SOT-23-5
Supply Voltage (DC)	3.00V (min)
Number of Outputs	2 Output
Output Voltage	11 V
Output Current	350 mA
Supply Current	300 µA
Switching Frequency	300kHz, 620kHz
Input Voltage (Max)	5.5 V
Input Voltage (Min)	3 V
Output Current (Max)	0.35 A
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	3V ~ 5.5V
Supply Voltage (Max)	5.5 V
Supply Voltage (Min)	3 V
Input Voltage	5.5 V
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Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The SN6501DBVT is a monolithic Oscillator/Power Driver, specifically designed for small form factor, isolated power supplies in isolated interface applications. The device drives a low-profile, centre-tapped transformer primary from a 3.3 or 5VDC power supply. The secondary can be wound to provide any isolated voltage based on transformer turns ratio. It consists of an oscillator followed by a gate drive circuit that provides the complementary output signals to drive the ground referenced N-channel power switches. The internal logic ensures break-before-make action between the two switches.
Push-pull Driver for Small Transformers
5V, 350mA (Maximum) and 3.3V, 150mA (Maximum) High Primary-side Current Drive
Low Ripple on Rectified Output Permits
Small Output Capacitors
Green Product, No Sb/Br
Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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