SN65HVD255D - TI

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

SN65HVD255D
Manufacturer

TI
ChipWorker Part#

CW42037763
Category

CAN IC, Controller Area Network
Package

SOIC-8
Description

CAN Transceiver with Fast Loop Times for Highly Loaded Networks 8-SOIC -40℃ to 125℃
Documentation

Datasheet

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SN65HVD255D Specifications

Attribute	Attribute Value

Part Number	SN65HVD255D
Manufacturer	TI
ChipWorker Part#	CW42037763
Category	CAN IC, Controller Area Network
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	4.50V ~ 5.50V
Supply Current	180 mA
Number of Positions	8 Position
Drivers Per Package	1
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	4.5V ~ 5.5V
Supply Voltage (Max)	5.5 V
Supply Voltage (Min)	4.5 V
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-40℃ ~ 125℃
Product Lifecycle Status	Active
Packaging	Each
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The SN65HVD255D is a Turbo CAN Transceiver for higher data rates and large networks. It meets the ISO1189-2 high speed CAN (controller area network) physical layer standard. It is designed for data rates in excess of 1Mbps for CAN in short networks and enhanced timing margin and higher data rates in long and highly-loaded networks. The device provides many protection features to enhance device and CAN- network robustness.
Short propagation delay times and fast loop times
Higher data rates in network
Enhances system timing margins
Ideal passive behaviour when unpowered
Bus pins are high impedance (no load to operating bus)
Logic pins are high impedance
Power up/down with glitch free operation on bus
Under-voltage protection on supply pins
Thermal shutdown protection
Green product and no Sb/Br
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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