STB26NM60N - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STB26NM60N
Manufacturer

ST Microelectronics
ChipWorker Part#

CW13460326
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 600V 20A
Documentation

Datasheet

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STB26NM60N Specifications

Attribute	Attribute Value

Part Number	STB26NM60N
Manufacturer	ST Microelectronics
ChipWorker Part#	CW13460326
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.135 Ω
Polarity	N-Channel
Power Dissipation	140 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	20A
Rise Time	25 ns
Input Capacitance (Ciss)	1800pF @50V(Vds)
Input Power (Max)	140 W
Fall Time	50 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	140W (Tc)
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Size-Length	10.75 mm
Size-Width	10.4 mm
Size-Height	4.6 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STB26NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance. This revolutionary Power MOSFET associates a vertical structure to the company"s strip layout to yield one of the world"s lowest ON-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
100% Avalanche tested
Low gate input resistance

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