STB42N65M5 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STB42N65M5
Manufacturer

ST Microelectronics
ChipWorker Part#

CW11066640
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK N-CH 650V 33A
Documentation

Datasheet

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STB42N65M5 Specifications

Attribute	Attribute Value

Part Number	STB42N65M5
Manufacturer	ST Microelectronics
ChipWorker Part#	CW11066640
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.07 Ω
Polarity	N-Channel
Power Dissipation	190 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	650 V
Continuous Drain Current (Ids)	33A
Rise Time	24 ns
Input Capacitance (Ciss)	4650pF @100V(Vds)
Input Power (Max)	190 W
Fall Time	13 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	190W (Tc)
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Size-Length	10.75 mm
Size-Width	10.4 mm
Size-Height	4.6 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The STB42N65M5 is a MDmesh™ N-channel Power MOSFET offers excellent switching performance. The MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon-based Power MOSFET, making it especially suitable for applications which require superior power density and outstanding efficiencies.
TO-220 worldwide best RDS (ON)
Higher VDSS rating
High dV/dt capability
Easy to drive
100% Avalanche tested

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