STD901T - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STD901T
Manufacturer

ST Microelectronics
ChipWorker Part#

CW45836533
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK NPN 350V 4A
Documentation

Datasheet

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STD901T Specifications

Attribute	Attribute Value

Part Number	STD901T
Manufacturer	ST Microelectronics
ChipWorker Part#	CW45836533
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Polarity	NPN
Power Dissipation	35 W
Breakdown Voltage (Collector to Emitter)	350 V
Continuous Collector Current	4A
hFE Min	1800 @2A, 2V
Input Power (Max)	35 W
Fall Time	1.5 µs
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	35000 mW
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Do you need a device that can yield much higher current gains? Thanks to STMicroelectronics, the NPN STD901T Darlington transistor can amplify a current to meet your needs. This product"s maximum continuous DC collector current is 4 A, while its minimum DC current gain is 500@4A@2 V|1800@2A@2V. It has a maximum collector emitter saturation voltage of 2@20mA@2A V. This Darlington transistor array"s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 1.8@20mA@2A V. Its maximum power dissipation is 35000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V.

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