STD9NM60N ,MOSFET, MOSFET Transistor - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

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95 points

Part No

STD9NM60N
Manufacturer

ST Microelectronics
ChipWorker Part#

CW40574630
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

N-channel 600V, 0.63Ω, 6.5A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET
Documentation

Datasheet
Ships from

Moscow
Наличие

1977 pcs In Stock
Estimated Price

$ 0.14

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STD9NM60N Specifications

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Attribute	Attribute Value

Part Number	STD9NM60N
Manufacturer	ST Microelectronics
ChipWorker Part#	CW40574630
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.63 Ω
Polarity	N-Channel
Power Dissipation	70 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	600 V
Rise Time	23 ns
Input Capacitance (Ciss)	452pF @50V(Vds)
Input Power (Max)	70 W
Fall Time	26.7 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	70W (Tc)
	expand all
Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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Product Description

Description
This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most
demanding high efficiency converters.
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
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