STE53NC50 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STE53NC50
Manufacturer

ST Microelectronics
ChipWorker Part#

CW9735725
Category

MOSFET, MOSFET Transistor
Package

ISOTOP-4
Description

ISOTOP N-CH 500V 53A
Documentation

Datasheet

STE53NC50 Global Supplier

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STE53NC50 Specifications

Attribute	Attribute Value

Part Number	STE53NC50
Manufacturer	ST Microelectronics
ChipWorker Part#	CW9735725
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	ISOTOP-4
Voltage Rating (DC)	500 V
Current Rating	53.0 A
Power Rating	460 W
Number of Channels	1 Channel
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.08 Ω
Polarity	N-Channel
Power Dissipation	460 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	53.0 A
Rise Time	70 ns
Isolation Voltage	2.50 kV
Input Capacitance (Ciss)	11200pF @25V(Vds)
Input Power (Max)	460 W
Fall Time	38 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	460W (Tc)
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Size-Length	38.2 mm
Size-Width	25.5 mm
Size-Height	9.1 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STE53NC50 is a 500V N-channel PowerMesh™II MOSFET with extremely high dv/dt capability. The layout refinements introduced greatly improve the area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. The MOSFET is used in DC-AC converters, welding equipment and uninterruptible power supplies.
100% Avalanche tested
New high voltage benchmark
Gate charge minimized
High peak power
High ruggedness capability

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