STF5NK100Z - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STF5NK100Z
Manufacturer

ST Microelectronics
ChipWorker Part#

CW5931266
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

TO-220FP N-CH 1000V 3.5A
Documentation

Datasheet

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STF5NK100Z Specifications

Attribute	Attribute Value

Part Number	STF5NK100Z
Manufacturer	ST Microelectronics
ChipWorker Part#	CW5931266
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	1.00 kV
Current Rating	3.50 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	2.7 Ω
Polarity	N-Channel
Power Dissipation	30 W
Threshold Voltage	3.75 V
Drain to Source Voltage (Vds)	1000 V
Breakdown Voltage (Drain to Source)	1.00 kV
Breakdown Voltage (Gate to Source)	±30.0 V
Continuous Drain Current (Ids)	3.50 A
Rise Time	7.7 ns
Input Capacitance (Ciss)	1154pF @25V(Vds)
Input Power (Max)	30 W
Fall Time	19 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	30000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The STF5NK100Z is a SuperMESH3™ N-channel Power MOSFET features minimized gate charge. This new SuperMESH™ Power MOSFET is the result of further design improvements on ST"s well-established strip based PowerMESH™ layout. In addition to significantly lower ON-resistance, the device offers superior dV/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ device further complements an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products.
Extremely high dV/dt capability
100% Avalanche tested
Very low intrinsic capacitance
Very good manufacturing repeatability

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