STGB30M65DF2 ,IGBT Transistor, IGBT Module - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

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88 points

Part No

STGB30M65DF2
Manufacturer

ST Microelectronics
ChipWorker Part#

CW4568393
Category

IGBT Transistor, IGBT Module
Package

TO-263-3
Description

STMICROELECTRONICS STGB30M65DF2 IGBT Single Transistor, 60A, 1.55V, 258W, 650V, TO-263, 3Pins
Documentation

Datasheet
Ships from

Moscow
Наличие

In Stock
Estimated Price

$ 1.58

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STGB30M65DF2 Specifications

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Attribute	Attribute Value

Part Number	STGB30M65DF2
Manufacturer	ST Microelectronics
ChipWorker Part#	CW4568393
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Power Dissipation	258 W
Breakdown Voltage (Collector to Emitter)	650 V
Reverse recovery time	140 ns
Input Power (Max)	258 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	258 W
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Size-Length	10.4 mm
Size-Width	9.35 mm
Size-Height	4.6 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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Product Description

This powerful and secure STGB30M65DF2 IGBT transistor from STMicroelectronics will make sure your circuit works properly. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 258000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.

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