STGFW20V60DF - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

STGFW20V60DF
Manufacturer

ST Microelectronics
ChipWorker Part#

CW49690800
Category

IGBT Transistor, IGBT Module
Package

TO-3-3
Description

Trans IGBT Chip N-CH 600V 40A 52000mW 3Pin(3+Tab) TO-3pF Tube
Documentation

Datasheet

STGFW20V60DF Global Supplier

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STGFW20V60DF Specifications

Attribute	Attribute Value

Part Number	STGFW20V60DF
Manufacturer	ST Microelectronics
ChipWorker Part#	CW49690800
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Power Dissipation	52 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	40 ns
Input Power (Max)	52 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	52000 mW
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Size-Length	15.7 mm
Size-Width	5.7 mm
Size-Height	26.7 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

The STGFW20V60DF IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 52000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes field stop|trench technology.

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